STD3NM60N STMicroelectronics
| Кількість | Ціна |
|---|---|
| 3+ | 134.93 грн |
| 10+ | 79.96 грн |
| 100+ | 48.28 грн |
| 500+ | 38.25 грн |
| 1000+ | 34.49 грн |
| 2500+ | 30.59 грн |
| 5000+ | 29.40 грн |
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Технічний опис STD3NM60N STMicroelectronics
Description: MOSFET N-CH 600V 3.3A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 50W (Tc), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.65A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції STD3NM60N
| Фото | Назва | Виробник | Інформація |
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STD3NM60N | Виробник : STMicroelectronics |
 Description: MOSFET N-CH 600V 3.3A DPAKInput Capacitance (Ciss) (Max) @ Vds: 188 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.65A, 10V Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
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STD3NM60N | Виробник : STMicroelectronics |
Description: MOSFET N-CH 600V 3.3A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.65A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 50 V |
товару немає в наявності |
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| STD3NM60N | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.3A; 50W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.3A Power dissipation: 50W Case: DPAK On-state resistance: 1.8mΩ Mounting: SMD Gate charge: 9.5nC |
товару немає в наявності |