STD40P8F6AG STMicroelectronics
Виробник: STMicroelectronics
MOSFETs Automotive-grade P-channel -80 V, 18.5 mOhm typ., -40 A STripFET F6 Power MOSFET
| Кількість | Ціна |
|---|---|
| 3+ | 161.00 грн |
| 10+ | 101.79 грн |
| 100+ | 60.57 грн |
| 500+ | 48.16 грн |
| 1000+ | 45.37 грн |
| 2500+ | 40.01 грн |
| 5000+ | 39.66 грн |
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Технічний опис STD40P8F6AG STMicroelectronics
Description: MOSFET P-CH 80V DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252 (DPAK), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4112 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції STD40P8F6AG
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STD40P8F6AG | Виробник : STMicroelectronics |
Description: MOSFET P-CH 80V DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4112 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
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STD40P8F6AG | Виробник : STMicroelectronics |
Description: MOSFET P-CH 80V DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4112 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |