STD45N10F7 STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 45A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 39.93 грн |
| 5000+ | 36.04 грн |
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Технічний опис STD45N10F7 STMicroelectronics
Description: MOSFET N-CH 100V 45A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції STD45N10F7 за ціною від 40.44 грн до 130.06 грн
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STD45N10F7 | STMicroelectronics |
Description: MOSFET N-CH 100V 45A DPAK Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4.5V @ 250µA Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 5310 шт: термін постачання 21-31 дні (днів) |
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STD45N10F7 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 32A; Idm: 180A Case: DPAK Mounting: SMD Kind of package: reel; tape Technology: STripFET™ F7 Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 18mΩ Drain current: 32A Gate-source voltage: ±20V Power dissipation: 60W Drain-source voltage: 100V Pulsed drain current: 180A Kind of channel: enhancement |
на замовлення 1787 шт: термін постачання 14-30 дні (днів) |
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| STD45N10F7 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 45A DPAK
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 45A DPAK
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 5310 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 112.87 грн |
| 10+ | 84.84 грн |
| 100+ | 58.31 грн |
| 500+ | 42.81 грн |
| 1000+ | 40.44 грн |
| STD45N10F7 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 32A; Idm: 180A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Technology: STripFET™ F7
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 18mΩ
Drain current: 32A
Gate-source voltage: ±20V
Power dissipation: 60W
Drain-source voltage: 100V
Pulsed drain current: 180A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 32A; Idm: 180A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Technology: STripFET™ F7
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 18mΩ
Drain current: 32A
Gate-source voltage: ±20V
Power dissipation: 60W
Drain-source voltage: 100V
Pulsed drain current: 180A
Kind of channel: enhancement
на замовлення 1787 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 130.06 грн |
| 5+ | 95.61 грн |
| 10+ | 83.86 грн |
| 25+ | 69.61 грн |
| 50+ | 60.38 грн |
| 100+ | 52.83 грн |
| 500+ | 50.32 грн |