Інші пропозиції STD60N3LH5
| Фото | Назва | Виробник | Інформація |
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STD60N3LH5 | Виробник : STMicroelectronics |
 Trans MOSFET N-CH 30V 48A 3-Pin(2+Tab) DPAK T/R |
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STD60N3LH5 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 30V 48A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 24A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V |
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STD60N3LH5 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 30V 48A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 24A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V |
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STD60N3LH5 | Виробник : STMicroelectronics |
MOSFET N-Channel 30V Pwr Mosfet |
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