STD60NH03L-T4

Description: MOSFET N-CH 30V 60A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 70W (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).