STD64N4F6AG STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 54A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 27A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 25 V
Qualification: AEC-Q101
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Технічний опис STD64N4F6AG STMicroelectronics
Description: STMICROELECTRONICS - STD64N4F6AG - Leistungs-MOSFET, n-Kanal, 40 V, 54 A, 7000 µohm, TO-252 (DPAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 40V, rohsCompliant: YES, Dauer-Drainstrom Id: 54A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 4.5V, euEccn: NLR, Verlustleistung: 60W, Bauform - Transistor: TO-252 (DPAK), Anzahl der Pins: 3Pin(s), Produktpalette: STripFET F6 Series, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 7000µohm, SVHC: No SVHC (25-Jun-2025).
Інші пропозиції STD64N4F6AG за ціною від 32.33 грн до 118.09 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STD64N4F6AG | STMicroelectronics |
Description: MOSFET N-CH 40V 54A DPAK Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 3196 шт: термін постачання 21-31 дні (днів) |
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STD64N4F6AG | STMicroelectronics |
MOSFETs Automotive-grade N-channel 40 V, 7 mOhm typ., 54 A STripFET F6 Power MOSFET in a |
на замовлення 1884 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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STD64N4F6AG | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STD64N4F6AG - Leistungs-MOSFET, n-Kanal, 40 V, 54 A, 7000 µohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 54A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 60W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: STripFET F6 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 7000µohm SVHC: No SVHC (25-Jun-2025) |
на замовлення 5837 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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STD64N4F6AG | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STD64N4F6AG - Leistungs-MOSFET, n-Kanal, 40 V, 54 A, 7000 µohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 54A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 60W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: STripFET F6 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 7000µohm SVHC: No SVHC (25-Jun-2025) |
на замовлення 5837 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| STD64N4F6AG |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 54A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 40V 54A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 3196 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 118.09 грн |
| 10+ | 71.92 грн |
| 100+ | 47.99 грн |
| 500+ | 35.42 грн |
| 1000+ | 32.33 грн |
| STD64N4F6AG |
|
Виробник: STMicroelectronics
MOSFETs Automotive-grade N-channel 40 V, 7 mOhm typ., 54 A STripFET F6 Power MOSFET in a
MOSFETs Automotive-grade N-channel 40 V, 7 mOhm typ., 54 A STripFET F6 Power MOSFET in a
на замовлення 1884 шт:
термін постачання 21-30 дні (днів)
| STD64N4F6AG |
|
Виробник: STMICROELECTRONICS
Description: STMICROELECTRONICS - STD64N4F6AG - Leistungs-MOSFET, n-Kanal, 40 V, 54 A, 7000 µohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 54A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 60W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: STripFET F6 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 7000µohm
SVHC: No SVHC (25-Jun-2025)
Description: STMICROELECTRONICS - STD64N4F6AG - Leistungs-MOSFET, n-Kanal, 40 V, 54 A, 7000 µohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 54A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 60W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: STripFET F6 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 7000µohm
SVHC: No SVHC (25-Jun-2025)
на замовлення 5837 шт:
термін постачання 21-31 дні (днів)
| STD64N4F6AG |
|
Виробник: STMICROELECTRONICS
Description: STMICROELECTRONICS - STD64N4F6AG - Leistungs-MOSFET, n-Kanal, 40 V, 54 A, 7000 µohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 54A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 60W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: STripFET F6 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 7000µohm
SVHC: No SVHC (25-Jun-2025)
Description: STMICROELECTRONICS - STD64N4F6AG - Leistungs-MOSFET, n-Kanal, 40 V, 54 A, 7000 µohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 54A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 60W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: STripFET F6 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 7000µohm
SVHC: No SVHC (25-Jun-2025)
на замовлення 5837 шт:
термін постачання 21-31 дні (днів)