STD65N160M9 STMicroelectronics

Description: N-CHANNEL 650 V, 132 MOHM TYP.,, Input Capacitance (Ciss) (Max) @ Vds: 1239 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 4.2V @ 250µA, Power Dissipation (Max): 106W (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).