STD65N55F3 STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 55V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 32A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 2+ | 209.67 грн |
| 10+ | 130.78 грн |
| 100+ | 90.30 грн |
| 500+ | 68.49 грн |
| 1000+ | 65.73 грн |
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Технічний опис STD65N55F3 STMicroelectronics
Description: MOSFET N-CH 55V 80A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 32A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції STD65N55F3 за ціною від 60.99 грн до 224.73 грн
| Фото | Назва | Виробник | Інформація |
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STD65N55F3 | Виробник : STMicroelectronics |
MOSFETs STripFET |
на замовлення 1563 шт: термін постачання 21-30 дні (днів) |
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STD65N55F3 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 55V 80A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 32A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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STD65N55F3 | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK; ESD Kind of package: reel; tape Mounting: SMD Technology: SuperMesh™ Polarisation: unipolar On-state resistance: 8.5mΩ Gate-source voltage: ±20V Drain-source voltage: 55V Drain current: 56A Power dissipation: 110W Case: DPAK Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET |
товару немає в наявності |