STD7NM64N STMicroelectronics
| Кількість | Ціна |
|---|---|
| 3+ | 151.19 грн |
| 10+ | 133.81 грн |
| 100+ | 94.06 грн |
| 500+ | 77.34 грн |
| 1000+ | 63.96 грн |
| 2500+ | 63.33 грн |
| 5000+ | 62.71 грн |
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Технічний опис STD7NM64N STMicroelectronics
Description: MOSFET N-CH 640V 5A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Drain to Source Voltage (Vdss): 640 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції STD7NM64N
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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STD7NM64N | Виробник : STMicroelectronics |
 Description: MOSFET N-CH 640V 5A DPAKInput Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 640 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
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