Технічний опис STD830CP40 STM
Description: TRANS NPN/PNP 400V 3A 8DIP, Packaging: Tube, Package / Case: 8-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Transistor Type: 1 NPN, 1 PNP, Operating Temperature: 150°C (TJ), Power - Max: 3W, Current - Collector (Ic) (Max): 3A, Voltage - Collector Emitter Breakdown (Max): 400V, Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 700mA, 5V, Supplier Device Package: 8-DIP.
Інші пропозиції STD830CP40
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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STD830CP40 | STMicroelectronics |
 Description: TRANS NPN/PNP 400V 3A 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 3W Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 700mA, 5V Supplier Device Package: 8-DIP |
товару немає в наявності |
В кошику од. на суму грн. |
 |
STD830CP40 | STMicroelectronics |
Bipolar Transistors - BJT IGBT & Power Bipolar |
товару немає в наявності |
В кошику од. на суму грн. |
| STD830CP40 |
|
Виробник: STMicroelectronics
Description: TRANS NPN/PNP 400V 3A 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 3W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 700mA, 5V
Supplier Device Package: 8-DIP
Description: TRANS NPN/PNP 400V 3A 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 3W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 700mA, 5V
Supplier Device Package: 8-DIP
товару немає в наявності
В кошику
од. на суму грн.
| STD830CP40 |
|
Виробник: STMicroelectronics
Bipolar Transistors - BJT IGBT & Power Bipolar
Bipolar Transistors - BJT IGBT & Power Bipolar
товару немає в наявності
В кошику
од. на суму грн.