STD85N10F7AG STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 70A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 2500+ | 48.71 грн |
| 5000+ | 45.41 грн |
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Технічний опис STD85N10F7AG STMicroelectronics
Description: MOSFET N-CH 100V 70A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V, Power Dissipation (Max): 85W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: DPAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V, Qualification: AEC-Q101.
Інші пропозиції STD85N10F7AG за ціною від 44.40 грн до 165.44 грн
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STD85N10F7AG | Виробник : STMicroelectronics |
MOSFETs Automotive-grade N-channel 100 V, 0.0085 Ohm typ., 70 A STripFET F7 Power MOSFET |
на замовлення 1278 шт: термін постачання 21-30 дні (днів) |
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STD85N10F7AG | Виробник : STMicroelectronics |
Description: MOSFET N-CH 100V 70A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 18320 шт: термін постачання 21-31 дні (днів) |
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