STD8NF25 STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 250V 8A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 72W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Технічний опис STD8NF25 STMicroelectronics
Description: STMICROELECTRONICS - STD8NF25 - Leistungs-MOSFET, n-Kanal, 250 V, 8 A, 0.318 ohm, TO-252 (DPAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 250V, rohsCompliant: YES, Dauer-Drainstrom Id: 8A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 4V, euEccn: NLR, Verlustleistung: 72W, Bauform - Transistor: TO-252 (DPAK), Anzahl der Pins: 3Pin(s), Produktpalette: STripFET II, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.318ohm, SVHC: No SVHC (21-Jan-2025).
Інші пропозиції STD8NF25 за ціною від 22.95 грн до 86.01 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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STD8NF25 | STMicroelectronics |
Description: MOSFET N-CH 250V 8A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 8A, 10V Power Dissipation (Max): 72W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 3098 шт: термін постачання 21-31 дні (днів) |
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STD8NF25 | STMicroelectronics |
MOSFETs N-Ch 250 V 318 mOhm 8 A STripFET II |
на замовлення 3117 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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STD8NF25 | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STD8NF25 - Leistungs-MOSFET, n-Kanal, 250 V, 8 A, 0.318 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 250V rohsCompliant: YES Dauer-Drainstrom Id: 8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 72W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: STripFET II productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.318ohm SVHC: No SVHC (21-Jan-2025) |
на замовлення 2958 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| STD8NF25 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 250V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 8A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 250V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 8A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3098 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 86.01 грн |
| 10+ | 52.31 грн |
| 100+ | 34.55 грн |
| 500+ | 25.26 грн |
| 1000+ | 22.95 грн |
| STD8NF25 |
|
Виробник: STMicroelectronics
MOSFETs N-Ch 250 V 318 mOhm 8 A STripFET II
MOSFETs N-Ch 250 V 318 mOhm 8 A STripFET II
на замовлення 3117 шт:
термін постачання 21-30 дні (днів)
| STD8NF25 |
|
Виробник: STMICROELECTRONICS
Description: STMICROELECTRONICS - STD8NF25 - Leistungs-MOSFET, n-Kanal, 250 V, 8 A, 0.318 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 250V
rohsCompliant: YES
Dauer-Drainstrom Id: 8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 72W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: STripFET II
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.318ohm
SVHC: No SVHC (21-Jan-2025)
Description: STMICROELECTRONICS - STD8NF25 - Leistungs-MOSFET, n-Kanal, 250 V, 8 A, 0.318 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 250V
rohsCompliant: YES
Dauer-Drainstrom Id: 8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 72W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: STripFET II
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.318ohm
SVHC: No SVHC (21-Jan-2025)
на замовлення 2958 шт:
термін постачання 21-31 дні (днів)