Технічний опис STD90N02L-1 ST
Description: MOSFET N-CH 25V 60A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: IPAK, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 16 V.
Інші пропозиції STD90N02L-1
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STD90N02L-1 | Виробник : STMicroelectronics |
 Description: MOSFET N-CH 25V 60A IPAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 16 V |
товару немає в наявності |
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STD90N02L-1 | Виробник : STMicroelectronics |
MOSFET N Ch 24V 0.0068 Ohm 60A |
товару немає в наявності |