STD9HN65M2 STMicroelectronics
Виробник: STMicroelectronics
MOSFET N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in DPAK package
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Технічний опис STD9HN65M2 STMicroelectronics
Description: MOSFET N-CH 650V 5.5A DPAK, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ).
Інші пропозиції STD9HN65M2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| STD9HN65M2 | Виробник : STM | MOSFET N-CH 650V 5.5A DPAK Група товару: Транзистори Од. вим: шт |
товару немає в наявності |
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STD9HN65M2 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 650V 5.5A DPAK Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) FET Type: N-Channel |
товару немає в наявності |
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STD9HN65M2 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 650V 5.5A DPAK Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) |
товару немає в наявності |