STD9N65DM6AG STMicroelectronics
Виробник: STMicroelectronics
MOSFETs Automotive-grade N-channel 650 V, 365 mOhm typ., 9 A MDmesh DM6 Power MOSFET in
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 222.69 грн |
| 10+ | 127.84 грн |
| 100+ | 85.57 грн |
| 500+ | 69.18 грн |
| 1000+ | 68.53 грн |
| 2500+ | 61.43 грн |
| 5000+ | 60.26 грн |
Товар під замовлення
Немає на нашому складі — привозимо зі складу постачальника після оформлення замовлення.
термін постачання:
31-40 дні (днів)
Мінімальна партія:
2 шт
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Технічний опис STD9N65DM6AG STMicroelectronics
Description: DISCRETE, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 440mOhm @ 4.5A, 10V, Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-252 (DPAK), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 100 V, Qualification: AEC-Q101.
Інші пропозиції STD9N65DM6AG
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
STD9N65DM6AG | STMicroelectronics |
Description: DISCRETE Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 440mOhm @ 4.5A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
STD9N65DM6AG | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 9A; Idm: 28A; 89W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 9A Power dissipation: 89W Case: DPAK Gate-source voltage: ±25V On-state resistance: 440mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 28A Gate charge: 11.7nC Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. |
| STD9N65DM6AG |
|
Виробник: STMicroelectronics
Description: DISCRETE
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 4.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 100 V
Qualification: AEC-Q101
Description: DISCRETE
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 4.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 100 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| STD9N65DM6AG |
|
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9A; Idm: 28A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 440mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 11.7nC
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9A; Idm: 28A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 440mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 11.7nC
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.