STD9N65DM6AG STMicroelectronics
Виробник: STMicroelectronics
MOSFETs Automotive-grade N-channel 650 V, 365 mOhm typ., 9 A MDmesh DM6 Power MOSFET in
| Кількість | Ціна |
|---|---|
| 2+ | 199.84 грн |
| 10+ | 126.29 грн |
| 100+ | 78.74 грн |
| 500+ | 65.96 грн |
| 1000+ | 56.64 грн |
| 2500+ | 54.43 грн |
Відгуки про товар
Написати відгук
Технічний опис STD9N65DM6AG STMicroelectronics
Description: DISCRETE, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 440mOhm @ 4.5A, 10V, Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-252 (DPAK), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 100 V, Qualification: AEC-Q101.
Інші пропозиції STD9N65DM6AG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
STD9N65DM6AG | Виробник : STMicroelectronics |
Description: DISCRETE Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 440mOhm @ 4.5A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |