STD9N65DM6AG STMicroelectronics
Виробник: STMicroelectronics
MOSFETs Automotive-grade N-channel 650 V, 365 mOhm typ., 9 A MDmesh DM6 Power MOSFET in
MOSFETs Automotive-grade N-channel 650 V, 365 mOhm typ., 9 A MDmesh DM6 Power MOSFET in
на замовлення 1678 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 220.43 грн |
| 10+ | 139.31 грн |
| 100+ | 86.85 грн |
| 500+ | 72.76 грн |
| 1000+ | 62.47 грн |
| 2500+ | 60.03 грн |
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Технічний опис STD9N65DM6AG STMicroelectronics
Description: DISCRETE, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 440mOhm @ 4.5A, 10V, Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-252 (DPAK), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 100 V, Qualification: AEC-Q101.
Інші пропозиції STD9N65DM6AG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| STD9N65DM6AG | Виробник : STMicroelectronics |
 Trans MOSFET N-CH 650V 9A Automotive 3-Pin(2+Tab) DPAK T/R |
товару немає в наявності |
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STD9N65DM6AG | Виробник : STMicroelectronics |
Description: DISCRETE Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 440mOhm @ 4.5A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
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| STD9N65DM6AG | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 9A; Idm: 28A; 89W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 9A Power dissipation: 89W Case: DPAK Gate-source voltage: ±25V On-state resistance: 440mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Gate charge: 11.7nC Pulsed drain current: 28A |
товару немає в наявності |