STD9N65DM6AG STMicroelectronics

Description: DISCRETE, Power Dissipation (Max): 89W (Tc), Rds On (Max) @ Id, Vgs: 440mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 4.75V @ 250µA.