Технічний опис STD9N80K5 STMicroelectronics
Description: MOSFET N-CHANNEL 800V 7A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 100 V.
Інші пропозиції STD9N80K5
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| STD9N80K5 | Виробник : STMicroelectronics |
 Trans MOSFET N-CH 800V 7A 3-Pin(2+Tab) DPAK T/R |
товару немає в наявності |
||
| STD9N80K5 | Виробник : STMicroelectronics |
STD9N80K5 SMD N channel transistors |
товару немає в наявності |
||
 |
STD9N80K5 | Виробник : STMicroelectronics |
Description: MOSFET N-CHANNEL 800V 7A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 100 V |
товару немає в наявності |
|
 |
STD9N80K5 | Виробник : STMicroelectronics |
MOSFETs N-channel 800 V, 0.73 Ohm typ 7 A MDmesh K5 Power MOSFET |
товару немає в наявності |