STD9NM60N STMicroelectronics
| Кількість | Ціна |
|---|---|
| 2+ | 210.60 грн |
| 10+ | 118.63 грн |
| 100+ | 76.67 грн |
| 500+ | 66.56 грн |
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Технічний опис STD9NM60N STMicroelectronics
Description: MOSFET N-CH 600V 6.5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), Rds On (Max) @ Id, Vgs: 745mOhm @ 3.25A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 17.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 452 pF @ 50 V.
Інші пропозиції STD9NM60N за ціною від 74.51 грн до 230.53 грн
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STD9NM60N | Виробник : STMicroelectronics |
 Description: MOSFET N-CH 600V 6.5A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 745mOhm @ 3.25A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 452 pF @ 50 V |
на замовлення 2312 шт: термін постачання 21-31 дні (днів) |
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STD9NM60N | Виробник : STMicroelectronics |
Description: MOSFET N-CH 600V 6.5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 745mOhm @ 3.25A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 452 pF @ 50 V |
товару немає в наявності |
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| STD9NM60N | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.5A; Idm: 26A; 70W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.5A Power dissipation: 70W Case: DPAK Gate-source voltage: ±25V On-state resistance: 745mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 17.4nC Pulsed drain current: 26A |
товару немає в наявності |