Технічний опис STDRIVEG600W STMicroelectronics
Description: IC GATE DRVR HALF-BRIDGE DIE, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 4.75V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 620 V, Supplier Device Package: Wafer, Rise / Fall Time (Typ): 7ns, 5ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: N-Channel MOSFET, Logic Voltage - VIL, VIH: 1.45V, 2V, Current - Peak Output (Source, Sink): 5.5A, 6A.
Інші пропозиції STDRIVEG600W
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| STDRIVEG600W | Виробник : STMicroelectronics |
 Driver 4-OUT High and Low Side Half Brdg Wafer Tube |
товару немає в наявності |
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| STDRIVEG600W | Виробник : STMicroelectronics |
Description: IC GATE DRVR HALF-BRIDGE DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 4.75V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 620 V Supplier Device Package: Wafer Rise / Fall Time (Typ): 7ns, 5ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 1.45V, 2V Current - Peak Output (Source, Sink): 5.5A, 6A |
товару немає в наявності |
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STDRIVEG600W | Виробник : STMicroelectronics |
Gate Drivers High volt half-bridge gate driver for GaN transistors |
товару немає в наявності |