STDRIVEG600W STMicroelectronics
Виробник: STMicroelectronics
Description: IC GATE DRVR HALF-BRIDGE DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.75V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: Wafer
Rise / Fall Time (Typ): 7ns, 5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.45V, 2V
Current - Peak Output (Source, Sink): 5.5A, 6A
Відгуки про товар
Написати відгук
Технічний опис STDRIVEG600W STMicroelectronics
Description: IC GATE DRVR HALF-BRIDGE DIE, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 4.75V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 620 V, Supplier Device Package: Wafer, Rise / Fall Time (Typ): 7ns, 5ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: N-Channel MOSFET, Logic Voltage - VIL, VIH: 1.45V, 2V, Current - Peak Output (Source, Sink): 5.5A, 6A.
Інші пропозиції STDRIVEG600W
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
STDRIVEG600W | Виробник : STMicroelectronics |
 Gate Drivers High volt half-bridge gate driver for GaN transistors |
товару немає в наявності |