STDRIVEG610Q STMicroelectronics
Виробник: STMicroelectronicsDescription: MOTION CONTROL & AUTOMATION
Packaging: Bulk
Package / Case: 18-TFQFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 7.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 18-QFN (4x5)
Rise / Fall Time (Typ): 22ns, 11ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.45V, 2V
Current - Peak Output (Source, Sink): 1A, 2.4A
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Технічний опис STDRIVEG610Q STMicroelectronics
Description: MOTION CONTROL & AUTOMATION, Packaging: Bulk, Package / Case: 18-TFQFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 7.5V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 600 V, Supplier Device Package: 18-QFN (4x5), Rise / Fall Time (Typ): 22ns, 11ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: MOSFET (N-Channel), Logic Voltage - VIL, VIH: 1.45V, 2V, Current - Peak Output (Source, Sink): 1A, 2.4A.
Інші пропозиції STDRIVEG610Q
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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STDRIVEG610Q | Виробник : STMicroelectronics |
Gate Drivers High voltage and high-speed half-bridge gate driver for GaN power switches |
товару немає в наявності |