STDRIVEG610QTR STMicroelectronics
Виробник: STMicroelectronics
Description: HIGH VOLTAGE AND HIGH-SPEED HALF
Current - Peak Output (Source, Sink): 1A, 2.4A
Logic Voltage - VIL, VIH: 2V
Gate Type: GaN FET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 22ns, 11ns
Supplier Device Package: 18-QFN (4x5)
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 7.5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 18-TFQFN
Packaging: Cut Tape (CT)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 228.87 грн |
| 10+ | 165.45 грн |
| 25+ | 151.77 грн |
| 100+ | 128.29 грн |
| 250+ | 121.54 грн |
| 500+ | 117.47 грн |
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Технічний опис STDRIVEG610QTR STMicroelectronics
Description: HIGH VOLTAGE AND HIGH-SPEED HALF, Current - Peak Output (Source, Sink): 1A, 2.4A, Logic Voltage - VIL, VIH: 2V, Gate Type: GaN FET, Number of Drivers: 2, Driven Configuration: Half-Bridge, Channel Type: Independent, Rise / Fall Time (Typ): 22ns, 11ns, Supplier Device Package: 18-QFN (4x5), High Side Voltage - Max (Bootstrap): 600 V, Input Type: Non-Inverting, Voltage - Supply: 7.5V ~ 20V, Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 18-TFQFN, Packaging: Tape & Reel (TR).
Інші пропозиції STDRIVEG610QTR
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
STDRIVEG610QTR | STMicroelectronics | Gate Drivers High voltage and high-speed half-bridge gate driver for GaN power switches |
на замовлення 947 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| STDRIVEG610QTR |
Виробник: STMicroelectronics
Gate Drivers High voltage and high-speed half-bridge gate driver for GaN power switches
Gate Drivers High voltage and high-speed half-bridge gate driver for GaN power switches
на замовлення 947 шт:
термін постачання 21-30 дні (днів)