на замовлення 2852 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 124.58 грн |
| 10+ | 117.35 грн |
| 100+ | 100.46 грн |
| 500+ | 79.89 грн |
| 1000+ | 74.12 грн |
| 2500+ | 27.84 грн |
| 5000+ | 25.39 грн |
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Технічний опис STDV3055L104T4G onsemi
Description: MOSFET N-CH 60V 12A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Rds On (Max) @ Id, Vgs: 104mOhm @ 6A, 5V, Power Dissipation (Max): 1.5W (Ta), 48W (Tj), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: DPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції STDV3055L104T4G
| Фото | Назва | Виробник | Інформація |
Доступність |
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STDV3055L104T4G | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 60V 12A Automotive 3-Pin(2+Tab) DPAK T/R |
товару немає в наявності |
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STDV3055L104T4G | Виробник : onsemi |
Description: MOSFET N-CH 60V 12A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 104mOhm @ 6A, 5V Power Dissipation (Max): 1.5W (Ta), 48W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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STDV3055L104T4G | Виробник : onsemi |
Description: MOSFET N-CH 60V 12A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 104mOhm @ 6A, 5V Power Dissipation (Max): 1.5W (Ta), 48W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
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| STDV3055L104T4G | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 45A Power dissipation: 48W Case: DPAK Gate-source voltage: ±15V On-state resistance: 0.104Ω Mounting: SMD Gate charge: 7.4nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |