STE53NC50

Виробник: STMicroelectronics
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 33A; ISOTOP; screw; Idm: 212A; 460W
Case: ISOTOP
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Drain current: 33A
Pulsed drain current: 212A
Drain-source voltage: 500V
Power dissipation: 460W
Type of semiconductor module: MOSFET transistor

Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 53A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 434 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOTOP
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount

Виробник: STMICROELECTRONICS
Description: STMICROELECTRONICS - STE53NC50 - MOSFET-Transistor, n-Kanal, 53 A, 500 V, 0.08 ohm, 10 V, 3 V
tariffCode: 85412900
Drain-Source-Spannung Vds: 500V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 53A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 460W
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.08ohm
SVHC: Lead (21-Jan-2025)

Виробник: STMicroelectronics
MOSFETs N-Ch 500 Volt 53 Amp