Технічний опис STF21NM50N STM
Description: MOSFET N-CH 500V 18A TO220FP, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220FP, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 30W (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc).
Інші пропозиції STF21NM50N
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| STF21NM50N | Виробник : STM |
 N-кан. MOSFET 550V, 18A, 0.15 Ом, 214Вт, TO-220F Група товару: Транзистори Од. вим: шт |
товару немає в наявності |
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STF21NM50N | Виробник : STMicroelectronics |
Description: MOSFET N-CH 500V 18A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220FP Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) |
товару немає в наявності |
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STF21NM50N | Виробник : STMicroelectronics |
MOSFET N-Ch 500 V 0.15 Ohm 18 A 2nd Gen MDmesh |
товару немає в наявності |