STF31N65M5 транзистор

Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 22A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V

Виробник: STMICROELECTRONICS
Description: STMICROELECTRONICS - STF31N65M5 - Leistungs-MOSFET, n-Kanal, 650 V, 22 A, 0.148 ohm, TO-220FP, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 22A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 5V
Verlustleistung: 30W
SVHC: No SVHC (05-Nov-2025)
Bauform - Transistor: TO-220FP
Anzahl der Pins: 3Pin(s)
Produktpalette: MDmesh M5 Series
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.148ohm

Виробник: STMicroelectronics
MOSFETs N-Ch 650V 0.124 Ohm 22 A MDmesh