Технічний опис STF33N60M6 STMicroelectronics
Description: MOSFET N-CH 600V 25A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 12.5A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-220FP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 100 V.
Інші пропозиції STF33N60M6
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STF33N60M6 | Виробник : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 15.8A; Idm: 78A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15.8A Pulsed drain current: 78A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.125Ω Mounting: THT Gate charge: 33.4nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
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STF33N60M6 | Виробник : STMicroelectronics |
![]() |
товару немає в наявності |
||
![]() |
STF33N60M6 | Виробник : STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 100 V |
товару немає в наявності |
|
![]() |
STF33N60M6 | Виробник : STMicroelectronics |
![]() |
товару немає в наявності |
|
![]() |
STF33N60M6 | Виробник : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 15.8A; Idm: 78A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15.8A Pulsed drain current: 78A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.125Ω Mounting: THT Gate charge: 33.4nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |