Технічний опис STF33N60M6 STMicroelectronics
Description: MOSFET N-CH 600V 25A TO220FP, Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220FP, Vgs(th) (Max) @ Id: 4.75V @ 250µA, Power Dissipation (Max): 35W (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 12.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Інші пропозиції STF33N60M6
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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STF33N60M6 | STMicroelectronics |
 Description: MOSFET N-CH 600V 25A TO220FPInput Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220FP Vgs(th) (Max) @ Id: 4.75V @ 250µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12.5A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
 |
STF33N60M6 | STMicroelectronics |
MOSFETs N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET in a TO-220FP packag |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
 |
STF33N60M6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 15.8A; Idm: 78A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15.8A Pulsed drain current: 78A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.125Ω Mounting: THT Gate charge: 33.4nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| STF33N60M6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 25A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 600V 25A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| STF33N60M6 |
|
Виробник: STMicroelectronics
MOSFETs N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET in a TO-220FP packag
MOSFETs N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET in a TO-220FP packag
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STF33N60M6 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 15.8A; Idm: 78A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Pulsed drain current: 78A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 15.8A; Idm: 78A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Pulsed drain current: 78A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.