STF5N95K5 STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 950V 3.5A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
| Кількість | Ціна |
|---|---|
| 3+ | 134.86 грн |
| 50+ | 104.02 грн |
| 100+ | 85.58 грн |
| 500+ | 67.95 грн |
Відгуки про товар
Написати відгук
Технічний опис STF5N95K5 STMicroelectronics
Description: MOSFET N-CH 950V 3.5A TO220FP, Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V, Drain to Source Voltage (Vdss): 950 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220FP, Vgs(th) (Max) @ Id: 5V @ 100µA, Power Dissipation (Max): 25W (Tc), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Інші пропозиції STF5N95K5 за ціною від 44.47 грн до 185.40 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STF5N95K5 | Виробник : STMicroelectronics |
MOSFETs N-CH 950V 2Ohm typ 3.5A Zener-protected |
на замовлення 855 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| STF5N95K5 | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 3.5A; Idm: 14A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 950V Drain current: 3.5A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 12.5nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 14A |
товару немає в наявності |