STF8NM50N STMicroelectronics
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 790mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 14nC
Power dissipation: 20W
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 85.91 грн |
| 10+ | 47.53 грн |
| 25+ | 40.22 грн |
| 50+ | 36.56 грн |
| 100+ | 35.07 грн |
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Технічний опис STF8NM50N STMicroelectronics
Description: STMICROELECTRONICS - STF8NM50N - Leistungs-MOSFET, n-Kanal, 500 V, 5 A, 0.73 ohm, TO-220FP, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 500V, rohsCompliant: YES, Dauer-Drainstrom Id: 5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 20W, Bauform - Transistor: TO-220FP, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.73ohm, SVHC: No SVHC (25-Jun-2025).
Інші пропозиції STF8NM50N за ціною від 59.22 грн до 192.49 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
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STF8NM50N | STMicroelectronics |
Description: MOSFET N-CH 500V 5A TO220FP Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220FP Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
на замовлення 950 шт: термін постачання 21-31 дні (днів) |
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STF8NM50N | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STF8NM50N - Leistungs-MOSFET, n-Kanal, 500 V, 5 A, 0.73 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 500V rohsCompliant: YES Dauer-Drainstrom Id: 5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 20W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.73ohm SVHC: No SVHC (25-Jun-2025) |
на замовлення 330 шт: термін постачання 21-31 дні (днів) |
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| STF8NM50N |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 5A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 500V 5A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 185.62 грн |
| 50+ | 87.50 грн |
| 100+ | 78.65 грн |
| 500+ | 59.22 грн |
| STF8NM50N |
|
Виробник: STMICROELECTRONICS
Description: STMICROELECTRONICS - STF8NM50N - Leistungs-MOSFET, n-Kanal, 500 V, 5 A, 0.73 ohm, TO-220FP, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 500V
rohsCompliant: YES
Dauer-Drainstrom Id: 5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 20W
Bauform - Transistor: TO-220FP
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.73ohm
SVHC: No SVHC (25-Jun-2025)
Description: STMICROELECTRONICS - STF8NM50N - Leistungs-MOSFET, n-Kanal, 500 V, 5 A, 0.73 ohm, TO-220FP, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 500V
rohsCompliant: YES
Dauer-Drainstrom Id: 5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 20W
Bauform - Transistor: TO-220FP
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.73ohm
SVHC: No SVHC (25-Jun-2025)
на замовлення 330 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 192.49 грн |
| 10+ | 94.23 грн |
| 100+ | 84.57 грн |