Технічний опис STFI260N6F6 STMicroelectronics
Description: MOSFET N-CH 60V 80A I2PAKFP, Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: I2PAKFP (TO-281), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 41.7W (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Full Pack, I2PAK, Packaging: Tube.
Інші пропозиції STFI260N6F6
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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STFI260N6F6 | Виробник : STMicroelectronics |
 Description: MOSFET N-CH 60V 80A I2PAKFPInput Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: I2PAKFP (TO-281) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 41.7W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Full Pack, I2PAK Packaging: Tube |
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