STFU9N65M2 STMicroelectronics
Виробник: STMicroelectronics
MOSFET N-channel 650 V, 0.79 Ohm typ 5 A MDmesh M2 Power MOSFET in TO-220FP ultra narro
| Кількість | Ціна |
|---|---|
| 3+ | 127.66 грн |
| 10+ | 67.25 грн |
| 100+ | 57.78 грн |
| 250+ | 54.78 грн |
| 500+ | 54.29 грн |
| 1000+ | 51.79 грн |
| 2000+ | 49.21 грн |
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Технічний опис STFU9N65M2 STMicroelectronics
Description: MOSFET N-CH 650V 5A TO220FP, Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220FP, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 20W (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tape & Reel (TR).
Інші пропозиції STFU9N65M2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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STFU9N65M2 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 650V 5A TO220FP Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220FP Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tape & Reel (TR) |
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