STFW8N120K5 STMicroelectronics
Виробник: STMicroelectronics
MOSFETs N-channel 1200 V, 1.65 Ohm typ., 6 A MDmesh K5 Power MOSFET in a TO-3PF package
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 504.18 грн |
| 10+ | 367.57 грн |
| 100+ | 258.19 грн |
| 600+ | 229.19 грн |
| 1200+ | 196.75 грн |
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Технічний опис STFW8N120K5 STMicroelectronics
Description: MOSFET N-CH 1200V 6A TO3PF, Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-3PF, Vgs(th) (Max) @ Id: 5V @ 100µA, Power Dissipation (Max): 48W (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3 Full Pack, Packaging: Tube.
Інші пропозиції STFW8N120K5
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
STFW8N120K5 | STMicroelectronics |
Description: MOSFET N-CH 1200V 6A TO3PF Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. |
| STFW8N120K5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 1200V 6A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 1200V 6A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.