STGAP2SICSANCTR STMicroelectronics
Виробник: STMicroelectronics
Galvanically Isolated Gate Drivers Galvanically isolated 4 A single gate driver for SiC MOSFETs
| Кількість | Ціна |
|---|---|
| 2+ | 204.10 грн |
| 10+ | 130.65 грн |
| 25+ | 103.15 грн |
| 100+ | 87.12 грн |
| 250+ | 82.24 грн |
| 500+ | 71.79 грн |
| 1000+ | 61.75 грн |
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Технічний опис STGAP2SICSANCTR STMicroelectronics
Description: DGTL ISO 2.83KV 1CH GATE DVR 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C, Current - Peak Output: 4A, Technology: Capacitive Coupling, Voltage - Isolation: 2830Vrms, Approval Agency: UL, Supplier Device Package: 8-SO, Rise / Fall Time (Typ): 30ns, 30ns, Common Mode Transient Immunity (Min): 100V/ns, Pulse Width Distortion (Max): 20ns, Grade: Automotive, Number of Channels: 1, Voltage - Output Supply: 3.1V ~ 5.25V, Qualification: AEC-Q100.
Інші пропозиції STGAP2SICSANCTR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| STGAP2SICSANCTR | Виробник : STMicroelectronics |
Description: DGTL ISO 2.83KV 1CH GATE DVR 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 4A Technology: Capacitive Coupling Voltage - Isolation: 2830Vrms Approval Agency: UL Supplier Device Package: 8-SO Rise / Fall Time (Typ): 30ns, 30ns Common Mode Transient Immunity (Min): 100V/ns Pulse Width Distortion (Max): 20ns Grade: Automotive Number of Channels: 1 Voltage - Output Supply: 3.1V ~ 5.25V Qualification: AEC-Q100 |
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