STGB20N40LZ STMicroelectronics
на замовлення 952 шт:
термін постачання 105-114 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 181.34 грн |
| 1000+ | 87.08 грн |
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Технічний опис STGB20N40LZ STMicroelectronics
Description: IGBT 390V 25A 150W D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Logic, Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A, Supplier Device Package: TO-263 (D2Pak), Td (on/off) @ 25°C: 700ns/4.3µs, Test Condition: 300V, 10A, 1kOhm, 5V, Gate Charge: 24 nC, Current - Collector (Ic) (Max): 25 A, Voltage - Collector Emitter Breakdown (Max): 390 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 150 W, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції STGB20N40LZ
| Фото | Назва | Виробник | Інформація |
Доступність |
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|---|---|---|---|---|---|
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STGB20N40LZ | Виробник : STMicroelectronics |
 Trans IGBT Chip N-CH 390V 25A 150000mW Automotive 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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| STGB20N40LZ | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 390V 25A 150W Automotive 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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| STGB20N40LZ | Виробник : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 390V; 20A; 150W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 390V Collector current: 20A Power dissipation: 150W Case: D2PAK Pulsed collector current: 40A Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level кількість в упаковці: 1 шт |
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STGB20N40LZ | Виробник : STMicroelectronics |
Description: IGBT 390V 25A 150W D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 700ns/4.3µs Test Condition: 300V, 10A, 1kOhm, 5V Gate Charge: 24 nC Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 390 V Current - Collector Pulsed (Icm): 40 A Power - Max: 150 W Grade: Automotive Qualification: AEC-Q101 |
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STGB20N40LZ | Виробник : STMicroelectronics |
Description: IGBT 390V 25A 150W D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 700ns/4.3µs Test Condition: 300V, 10A, 1kOhm, 5V Gate Charge: 24 nC Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 390 V Current - Collector Pulsed (Icm): 40 A Power - Max: 150 W Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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| STGB20N40LZ | Виробник : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 390V; 20A; 150W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 390V Collector current: 20A Power dissipation: 150W Case: D2PAK Pulsed collector current: 40A Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level |
товар відсутній |