STGB30H60DFB STMICROELECTRONICS
Виробник: STMICROELECTRONICSDescription: STMICROELECTRONICS - STGB30H60DFB - IGBT, 60 A, 1.55 V, 260 W, 600 V, TO-263 (D2PAK), 3 Pin(s)
tariffCode: 85423990
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.55V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 260W
Anzahl der Pins: 3Pin(s)
Kollektor-Emitter-Spannung, max.: 600V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 60A
на замовлення 880 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 155.98 грн |
| 500+ | 122.32 грн |
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Технічний опис STGB30H60DFB STMICROELECTRONICS
Description: TRENCH GATE FIELD-STOP IGBT, HB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 53 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Supplier Device Package: D²PAK (TO-263), IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 37ns/146ns, Switching Energy: 383µJ (on), 293µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 149 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 260 W.
Інші пропозиції STGB30H60DFB за ціною від 95.41 грн до 255.69 грн
| Фото | Назва | Виробник | Інформація |
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STGB30H60DFB | Виробник : STMicroelectronics |
IGBT Transistors Trench gate field-stop 600 V, 30 A high speed HB series IGBT |
на замовлення 975 шт: термін постачання 147-156 дні (днів) |
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STGB30H60DFB | Виробник : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGB30H60DFB - IGBT, 60 A, 1.55 V, 260 W, 600 V, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85423990 rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.55V usEccn: EAR99 euEccn: NLR Verlustleistung: 260W Anzahl der Pins: 3Pin(s) Kollektor-Emitter-Spannung, max.: 600V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 60A |
на замовлення 880 шт: термін постачання 21-31 дні (днів) |
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STGB30H60DFB | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 600V 60A 260W 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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STGB30H60DFB | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 600V 60A 260W 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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STGB30H60DFB | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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| STGB30H60DFB | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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| STGB30H60DFB | Виробник : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 30A; 260W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 260W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: SMD Gate charge: 149nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
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STGB30H60DFB | Виробник : STMicroelectronics |
Description: TRENCH GATE FIELD-STOP IGBT, HB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 53 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: D²PAK (TO-263) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/146ns Switching Energy: 383µJ (on), 293µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 149 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W |
товар відсутній |
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STGB30H60DFB | Виробник : STMicroelectronics |
Description: TRENCH GATE FIELD-STOP IGBT, HB Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 53 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: D²PAK (TO-263) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/146ns Switching Energy: 383µJ (on), 293µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 149 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W |
товар відсутній |
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| STGB30H60DFB | Виробник : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 30A; 260W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 260W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: SMD Gate charge: 149nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |