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STGB30H60DLLFBAG

STGB30H60DLLFBAG STMicroelectronics

stgb30h60dllfbag-1850891.pdf Виробник: STMicroelectronics
IGBT Transistors Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed
на замовлення 738 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+198.66 грн
10+ 164.59 грн
25+ 135.17 грн
100+ 115.29 грн
250+ 109.33 грн
500+ 102.7 грн
1000+ 87.46 грн
Мінімальне замовлення: 2
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Технічний опис STGB30H60DLLFBAG STMicroelectronics

Description: IGBT, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Logic, Vce(on) (Max) @ Vge, Ic: 2.15V @ 5V, 30A, Supplier Device Package: TO-263 (D2Pak), IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: -/320ns, Switching Energy: 600µJ (off), Test Condition: 400V, 30A, 10Ohm, 5V, Gate Charge: 110 nC, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 260 W.

Інші пропозиції STGB30H60DLLFBAG

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STGB30H60DLLFBAG STGB30H60DLLFBAG Виробник : STMicroelectronics 2090530593072485b.pdf Trans IGBT Chip N-CH 600V 60A 260000mW Automotive 3-Pin(2+Tab) D2PAK T/R
товар відсутній
STGB30H60DLLFBAG Виробник : STMicroelectronics 2090530593072485b.pdf Trans IGBT Chip N-CH 600V 60A 260mW Automotive 3-Pin(2+Tab) D2PAK T/R
товар відсутній
STGB30H60DLLFBAG Виробник : STMicroelectronics en.DM00336135.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; D2PAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 260W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Application: ignition systems
кількість в упаковці: 1 шт
товар відсутній
STGB30H60DLLFBAG STGB30H60DLLFBAG Виробник : STMicroelectronics en.DM00336135.pdf Description: IGBT
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 2.15V @ 5V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/320ns
Switching Energy: 600µJ (off)
Test Condition: 400V, 30A, 10Ohm, 5V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
товар відсутній
STGB30H60DLLFBAG STGB30H60DLLFBAG Виробник : STMicroelectronics en.DM00336135.pdf Description: IGBT
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 2.15V @ 5V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/320ns
Switching Energy: 600µJ (off)
Test Condition: 400V, 30A, 10Ohm, 5V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
товар відсутній
STGB30H60DLLFBAG Виробник : STMicroelectronics en.DM00336135.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; D2PAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 260W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Application: ignition systems
товар відсутній