Технічний опис STGB30H65FB STMicroelectronics
Description: IGBT, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Supplier Device Package: D²PAK (TO-263), IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 37ns/146ns, Switching Energy: 151µJ (on), 293µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 149 nC, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 260 W.
Інші пропозиції STGB30H65FB
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| STGB30H65FB | Виробник : STMicroelectronics |
 Trans IGBT Chip N-CH 650V 60A 260000mW 3-Pin(2+Tab) D2PAK T/R |
товару немає в наявності |
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STGB30H65FB | Виробник : STMicroelectronics |
Description: IGBT Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: D²PAK (TO-263) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/146ns Switching Energy: 151µJ (on), 293µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 149 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W |
товару немає в наявності |
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STGB30H65FB | Виробник : STMicroelectronics |
IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed |
товару немає в наявності |