STGB3NC120HDT4 STMicroelectronics
на замовлення 3336 шт:
термін постачання 105-114 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 172.04 грн |
| 10+ | 142.08 грн |
| 100+ | 99.64 грн |
| 500+ | 84.36 грн |
| 1000+ | 72.4 грн |
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Технічний опис STGB3NC120HDT4 STMicroelectronics
Description: IGBT 1200V 14A 75W D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 51 ns, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A, Supplier Device Package: TO-263 (D2Pak), Td (on/off) @ 25°C: 15ns/118ns, Switching Energy: 236µJ (on), 290µJ (off), Test Condition: 800V, 3A, 10Ohm, 15V, Gate Charge: 24 nC, Part Status: Active, Current - Collector (Ic) (Max): 14 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 20 A, Power - Max: 75 W.
Інші пропозиції STGB3NC120HDT4 за ціною від 116.99 грн до 193.74 грн
| Фото | Назва | Виробник | Інформація |
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STGB3NC120HDT4 | Виробник : STMICROELECTRONICS |
 Description: STMICROELECTRONICS - STGB3NC120HDT4 - IGBT, 14 A, 2.3 V, 75 W, 1.2 kV, TO-263 (D2PAK), 3 Pin(s)tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.3V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 75W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: PowerMESH Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C Kontinuierlicher Kollektorstrom: 14A |
на замовлення 267 шт: термін постачання 21-31 дні (днів) |
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STGB3NC120HDT4 | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 14A 75000mW 3-Pin(2+Tab) D2PAK T/R |
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| STGB3NC120HDT4 | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 14A 75000mW 3-Pin(2+Tab) D2PAK T/R |
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STGB3NC120HDT4 | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 14A 75W 3-Pin(2+Tab) D2PAK T/R |
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STGB3NC120HDT4 | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 14A 75W 3-Pin(2+Tab) D2PAK T/R |
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STGB3NC120HDT4 | Виробник : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 7A; 75W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 7A Power dissipation: 75W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1000 шт |
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STGB3NC120HDT4 | Виробник : STMicroelectronics |
Description: IGBT 1200V 14A 75W D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 51 ns Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 15ns/118ns Switching Energy: 236µJ (on), 290µJ (off) Test Condition: 800V, 3A, 10Ohm, 15V Gate Charge: 24 nC Part Status: Active Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 20 A Power - Max: 75 W |
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STGB3NC120HDT4 | Виробник : STMicroelectronics |
Description: IGBT 1200V 14A 75W D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 51 ns Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 15ns/118ns Switching Energy: 236µJ (on), 290µJ (off) Test Condition: 800V, 3A, 10Ohm, 15V Gate Charge: 24 nC Part Status: Active Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 20 A Power - Max: 75 W |
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STGB3NC120HDT4 | Виробник : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 7A; 75W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 7A Power dissipation: 75W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
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