на замовлення 3050 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 159.26 грн |
| 10+ | 101.28 грн |
| 100+ | 59.30 грн |
| 500+ | 46.97 грн |
| 1000+ | 36.99 грн |
| 2000+ | 36.92 грн |
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Технічний опис STGB6NC60HDT4 STMicroelectronics
Description: IGBT 600V 15A 56W D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 21 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3A, Supplier Device Package: D2PAK, Td (on/off) @ 25°C: 12ns/76ns, Switching Energy: 20µJ (on), 68µJ (off), Test Condition: 390V, 3A, 10Ohm, 15V, Gate Charge: 13.6 nC, Part Status: Active, Current - Collector (Ic) (Max): 15 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 21 A, Power - Max: 56 W.
Інші пропозиції STGB6NC60HDT4
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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STGB6NC60HDT4 | Виробник : STMicroelectronics |
 Trans IGBT Chip N-CH 600V 15A 62.5W 3-Pin(2+Tab) D2PAK T/R |
товару немає в наявності |
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STGB6NC60HDT4 | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 600V 15A 62.5W 3-Pin(2+Tab) D2PAK T/R |
товару немає в наявності |
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STGB6NC60HDT4 | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 600V 15A 62500mW 3-Pin(2+Tab) D2PAK T/R |
товару немає в наявності |
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| STGB6NC60HDT4 | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 600V 15A 62.5mW 3-Pin(2+Tab) D2PAK T/R |
товару немає в наявності |
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| STGB6NC60HDT4 | Виробник : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 7A; 62.5W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 7A Power dissipation: 62.5W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 21A Mounting: SMD Gate charge: 13.6nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товару немає в наявності |
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STGB6NC60HDT4 | Виробник : STMicroelectronics |
Description: IGBT 600V 15A 56W D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 21 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 12ns/76ns Switching Energy: 20µJ (on), 68µJ (off) Test Condition: 390V, 3A, 10Ohm, 15V Gate Charge: 13.6 nC Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 21 A Power - Max: 56 W |
товару немає в наявності |
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STGB6NC60HDT4 | Виробник : STMicroelectronics |
Description: IGBT 600V 15A 56W D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 21 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 12ns/76ns Switching Energy: 20µJ (on), 68µJ (off) Test Condition: 390V, 3A, 10Ohm, 15V Gate Charge: 13.6 nC Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 21 A Power - Max: 56 W |
товару немає в наявності |
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| STGB6NC60HDT4 | Виробник : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 7A; 62.5W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 7A Power dissipation: 62.5W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 21A Mounting: SMD Gate charge: 13.6nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |