STGB6NC60HDT4

STGB6NC60HDT4 STMicroelectronics


stgb6nc60hdt4-1850831.pdf Виробник: STMicroelectronics
IGBT Transistors PowerMESH TM IGBT
на замовлення 3576 шт:

термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
9+38.11 грн
Мінімальне замовлення: 9
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Технічний опис STGB6NC60HDT4 STMicroelectronics

Description: IGBT 600V 15A 56W D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 21 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3A, Supplier Device Package: D2PAK, Td (on/off) @ 25°C: 12ns/76ns, Switching Energy: 20µJ (on), 68µJ (off), Test Condition: 390V, 3A, 10Ohm, 15V, Gate Charge: 13.6 nC, Part Status: Active, Current - Collector (Ic) (Max): 15 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 21 A, Power - Max: 56 W.

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STGB6NC60HDT4 STGB6NC60HDT4 Виробник : STMicroelectronics stgb6nc60hdt4.pdf Trans IGBT Chip N-CH 600V 15A 62.5W 3-Pin(2+Tab) D2PAK T/R
товар відсутній
STGB6NC60HDT4 STGB6NC60HDT4 Виробник : STMicroelectronics stgb6nc60hdt4.pdf Trans IGBT Chip N-CH 600V 15A 62.5W 3-Pin(2+Tab) D2PAK T/R
товар відсутній
STGB6NC60HDT4 STGB6NC60HDT4 Виробник : STMicroelectronics stgb6nc60hdt4.pdf Trans IGBT Chip N-CH 600V 15A 62500mW 3-Pin(2+Tab) D2PAK T/R
товар відсутній
STGB6NC60HDT4 Виробник : STMicroelectronics stgb6nc60hdt4.pdf Trans IGBT Chip N-CH 600V 15A 62.5mW 3-Pin(2+Tab) D2PAK T/R
товар відсутній
STGB6NC60HDT4 Виробник : STMicroelectronics en.CD00058424.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 62.5W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 62.5W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
STGB6NC60HDT4 STGB6NC60HDT4 Виробник : STMicroelectronics en.CD00058424.pdf Description: IGBT 600V 15A 56W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 21 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 12ns/76ns
Switching Energy: 20µJ (on), 68µJ (off)
Test Condition: 390V, 3A, 10Ohm, 15V
Gate Charge: 13.6 nC
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 21 A
Power - Max: 56 W
товар відсутній
STGB6NC60HDT4 STGB6NC60HDT4 Виробник : STMicroelectronics en.CD00058424.pdf Description: IGBT 600V 15A 56W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 21 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 12ns/76ns
Switching Energy: 20µJ (on), 68µJ (off)
Test Condition: 390V, 3A, 10Ohm, 15V
Gate Charge: 13.6 nC
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 21 A
Power - Max: 56 W
товар відсутній
STGB6NC60HDT4 Виробник : STMicroelectronics en.CD00058424.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 62.5W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 62.5W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній