STGB7H60DF STMicroelectronics
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
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Технічний опис STGB7H60DF STMicroelectronics
Description: IGBT TRENCH FS 600V 14A TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 136 ns, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A, Supplier Device Package: TO-263 (D2Pak), IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 30ns/160ns, Switching Energy: 99µJ (on), 100µJ (off), Test Condition: 400V, 7A, 47Ohm, 15V, Gate Charge: 46 nC, Part Status: Active, Current - Collector (Ic) (Max): 14 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 28 A, Power - Max: 88 W.
Інші пропозиції STGB7H60DF за ціною від 37.58 грн до 84.42 грн
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STGB7H60DF | Виробник : STMicroelectronics |
 Trans IGBT Chip N-CH 600V 14A 88W 3-Pin(2+Tab) D2PAK T/R |
на замовлення 29 шт: термін постачання 21-31 дні (днів) |
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| STGB7H60DF | Виробник : STMicroelectronics |
IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 7 A high speed |
на замовлення 770 шт: термін постачання 21-30 дні (днів) |
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STGB7H60DF | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 600V 14A 88000mW 3-Pin(2+Tab) D2PAK T/R |
товару немає в наявності |
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| STGB7H60DF | Виробник : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 7A; 88W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 7A Power dissipation: 88W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 28A Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товару немає в наявності |
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STGB7H60DF | Виробник : STMicroelectronics |
Description: IGBT TRENCH FS 600V 14A TO-263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 136 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/160ns Switching Energy: 99µJ (on), 100µJ (off) Test Condition: 400V, 7A, 47Ohm, 15V Gate Charge: 46 nC Part Status: Active Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 28 A Power - Max: 88 W |
товару немає в наявності |
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STGB7H60DF | Виробник : STMicroelectronics |
Description: IGBT TRENCH FS 600V 14A TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 136 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/160ns Switching Energy: 99µJ (on), 100µJ (off) Test Condition: 400V, 7A, 47Ohm, 15V Gate Charge: 46 nC Part Status: Active Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 28 A Power - Max: 88 W |
товару немає в наявності |
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| STGB7H60DF | Виробник : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 7A; 88W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 7A Power dissipation: 88W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 28A Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |