STGB8NC60KDT4 STMicroelectronics
Виробник: STMicroelectronics
Description: IGBT 600V 15A 65W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 23.5 ns
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/72ns
Switching Energy: 55µJ (on), 85µJ (off)
Test Condition: 390V, 3A, 10Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 65 W
Description: IGBT 600V 15A 65W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 23.5 ns
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/72ns
Switching Energy: 55µJ (on), 85µJ (off)
Test Condition: 390V, 3A, 10Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 65 W
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 109.66 грн |
10+ | 87.93 грн |
100+ | 69.98 грн |
500+ | 55.57 грн |
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Технічний опис STGB8NC60KDT4 STMicroelectronics
Description: IGBT 600V 15A 65W D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 23.5 ns, Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A, Supplier Device Package: D2PAK, Td (on/off) @ 25°C: 17ns/72ns, Switching Energy: 55µJ (on), 85µJ (off), Test Condition: 390V, 3A, 10Ohm, 15V, Gate Charge: 19 nC, Part Status: Active, Current - Collector (Ic) (Max): 15 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 30 A, Power - Max: 65 W.
Інші пропозиції STGB8NC60KDT4 за ціною від 46.12 грн до 119.04 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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STGB8NC60KDT4 | Виробник : STMicroelectronics | IGBT Transistors N Ch 100V 0.033 Ohm 25A Pwr MOSFET |
на замовлення 1942 шт: термін постачання 21-30 дні (днів) |
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STGB8NC60KDT4 Код товару: 189599 |
Транзистори > IGBT |
товар відсутній
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STGB8NC60KDT4 | Виробник : STMicroelectronics | Trans IGBT Chip N-CH 600V 15A 65000mW 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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STGB8NC60KDT4 | Виробник : STMicroelectronics | Trans IGBT Chip N-CH 600V 15A 65000mW 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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STGB8NC60KDT4 | Виробник : STMicroelectronics | Trans IGBT Chip N-CH 600V 15A 65000mW 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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STGB8NC60KDT4 | Виробник : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 8A; 65W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 8A Power dissipation: 65W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
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STGB8NC60KDT4 | Виробник : STMicroelectronics |
Description: IGBT 600V 15A 65W D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 23.5 ns Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 17ns/72ns Switching Energy: 55µJ (on), 85µJ (off) Test Condition: 390V, 3A, 10Ohm, 15V Gate Charge: 19 nC Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 65 W |
товар відсутній |
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STGB8NC60KDT4 | Виробник : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 8A; 65W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 8A Power dissipation: 65W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |