STGD19N40LZ STMicroelectronics
Виробник: STMicroelectronicsTrans IGBT Chip N-CH 365V 25A 125W Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
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Технічний опис STGD19N40LZ STMicroelectronics
Description: IGBT 390V 25A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Logic, Vce(on) (Max) @ Vge, Ic: 1.5V @ 4.5V, 10A, Supplier Device Package: DPAK, Td (on/off) @ 25°C: 650ns/13.5µs, Test Condition: 300V, 10A, 1kOhm, 5V, Gate Charge: 17 nC, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 25 A, Voltage - Collector Emitter Breakdown (Max): 390 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 125 W, Qualification: AEC-Q101.
Інші пропозиції STGD19N40LZ
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STGD19N40LZ | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 365V 25A 125W Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
товару немає в наявності |
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STGD19N40LZ | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 365V 25A 125000mW Automotive 3-Pin(2+Tab) DPAK T/R |
товару немає в наявності |
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| STGD19N40LZ | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 365V 25A 125000mW Automotive 3-Pin(2+Tab) DPAK T/R |
товару немає в наявності |
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| STGD19N40LZ | Виробник : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 390V; 25A; 125W; DPAK; ignition systems; ESD Type of transistor: IGBT Collector-emitter voltage: 390V Collector current: 25A Power dissipation: 125W Case: DPAK Pulsed collector current: 40A Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Application: ignition systems Version: ESD Features of semiconductor devices: internally clamped; logic level кількість в упаковці: 1 шт |
товару немає в наявності |
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STGD19N40LZ | Виробник : STMicroelectronics |
Description: IGBT 390V 25A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.5V @ 4.5V, 10A Supplier Device Package: DPAK Td (on/off) @ 25°C: 650ns/13.5µs Test Condition: 300V, 10A, 1kOhm, 5V Gate Charge: 17 nC Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 390 V Current - Collector Pulsed (Icm): 40 A Power - Max: 125 W Qualification: AEC-Q101 |
товару немає в наявності |
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STGD19N40LZ | Виробник : STMicroelectronics |
Description: IGBT 390V 25A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.5V @ 4.5V, 10A Supplier Device Package: DPAK Td (on/off) @ 25°C: 650ns/13.5µs Test Condition: 300V, 10A, 1kOhm, 5V Gate Charge: 17 nC Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 390 V Current - Collector Pulsed (Icm): 40 A Power - Max: 125 W Qualification: AEC-Q101 |
товару немає в наявності |
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STGD19N40LZ | Виробник : STMicroelectronics |
IGBTs Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ |
товару немає в наявності |
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| STGD19N40LZ | Виробник : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 390V; 25A; 125W; DPAK; ignition systems; ESD Type of transistor: IGBT Collector-emitter voltage: 390V Collector current: 25A Power dissipation: 125W Case: DPAK Pulsed collector current: 40A Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Application: ignition systems Version: ESD Features of semiconductor devices: internally clamped; logic level |
товару немає в наявності |