STGD20N40LZ STMicroelectronics
Виробник: STMicroelectronicsDescription: IGBT 390V 25A 125W DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 700ns/4.3µs
Test Condition: 300V, 10A, 1kOhm, 5V
Gate Charge: 24 nC
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 390 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 125 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2431 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 202.52 грн |
| 10+ | 126.39 грн |
| 100+ | 87.25 грн |
| 500+ | 67.89 грн |
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Технічний опис STGD20N40LZ STMicroelectronics
Description: IGBT 390V 25A 125W DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Logic, Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A, Supplier Device Package: DPAK, Td (on/off) @ 25°C: 700ns/4.3µs, Test Condition: 300V, 10A, 1kOhm, 5V, Gate Charge: 24 nC, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 25 A, Voltage - Collector Emitter Breakdown (Max): 390 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 125 W, Qualification: AEC-Q101.
Інші пропозиції STGD20N40LZ
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Доступність |
Ціна |
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STGD20N40LZ | Виробник : STMicroelectronics |
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STGD20N40LZ | Виробник : STMicroelectronics |
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STGD20N40LZ | Виробник : STMicroelectronics |
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| STGD20N40LZ | Виробник : STMicroelectronics |
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| STGD20N40LZ | Виробник : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 390V; 25A; 125W; DPAK; ignition systems; ESD Type of transistor: IGBT Collector-emitter voltage: 390V Collector current: 25A Power dissipation: 125W Case: DPAK Pulsed collector current: 40A Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Features of semiconductor devices: internally clamped; logic level Application: ignition systems Version: ESD кількість в упаковці: 1 шт |
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STGD20N40LZ | Виробник : STMicroelectronics |
Description: IGBT 390V 25A 125W DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A Supplier Device Package: DPAK Td (on/off) @ 25°C: 700ns/4.3µs Test Condition: 300V, 10A, 1kOhm, 5V Gate Charge: 24 nC Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 390 V Current - Collector Pulsed (Icm): 40 A Power - Max: 125 W Qualification: AEC-Q101 |
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STGD20N40LZ | Виробник : STMicroelectronics |
IGBTs Auto 390V IGBT Clamped 300mJ EAS |
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| STGD20N40LZ | Виробник : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 390V; 25A; 125W; DPAK; ignition systems; ESD Type of transistor: IGBT Collector-emitter voltage: 390V Collector current: 25A Power dissipation: 125W Case: DPAK Pulsed collector current: 40A Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Features of semiconductor devices: internally clamped; logic level Application: ignition systems Version: ESD |
товару немає в наявності |