Технічний опис STGD3NC120H-1 STMicroelectronics
Description: IGBT 1200V 16A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A, Supplier Device Package: IPAK (TO-251), Td (on/off) @ 25°C: 15ns/118ns, Switching Energy: 236µJ (on), 290µJ (off), Test Condition: 800V, 3A, 10Ohm, 15V, Gate Charge: 24 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 20 A, Power - Max: 105 W.
Інші пропозиції STGD3NC120H-1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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STGD3NC120H-1 | Виробник : STMicroelectronics |
 Trans IGBT Chip N-CH 1200V 16A 105000mW 3-Pin(3+Tab) IPAK Tube |
товару немає в наявності |
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| STGD3NC120H-1 | Виробник : STMicroelectronics |
Description: IGBT 1200V 16A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A Supplier Device Package: IPAK (TO-251) Td (on/off) @ 25°C: 15ns/118ns Switching Energy: 236µJ (on), 290µJ (off) Test Condition: 800V, 3A, 10Ohm, 15V Gate Charge: 24 nC Part Status: Obsolete Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 20 A Power - Max: 105 W |
товару немає в наявності |