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Технічний опис STGD3NC120H-1 STMicroelectronics
Description: IGBT 1200V 16A IPAK, Power - Max: 105 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 16 A, Part Status: Obsolete, Gate Charge: 24 nC, Test Condition: 800V, 3A, 10Ohm, 15V, Switching Energy: 236µJ (on), 290µJ (off), Td (on/off) @ 25°C: 15ns/118ns, Supplier Device Package: IPAK (TO-251), Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube, Current - Collector Pulsed (Icm): 20 A.
Інші пропозиції STGD3NC120H-1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| STGD3NC120H-1 | Виробник : STMicroelectronics |
Description: IGBT 1200V 16A IPAK Power - Max: 105 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 16 A Part Status: Obsolete Gate Charge: 24 nC Test Condition: 800V, 3A, 10Ohm, 15V Switching Energy: 236µJ (on), 290µJ (off) Td (on/off) @ 25°C: 15ns/118ns Supplier Device Package: IPAK (TO-251) Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube Current - Collector Pulsed (Icm): 20 A |
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