STGD4M65DF2 STMicroelectronics
| Кількість | Ціна без ПДВ |
|---|---|
| 143+ | 98.78 грн |
| 154+ | 92.10 грн |
| 200+ | 78.37 грн |
| 500+ | 56.16 грн |
| 1000+ | 49.22 грн |
| 2500+ | 40.32 грн |
| 5000+ | 37.09 грн |
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Технічний опис STGD4M65DF2 STMicroelectronics
Description: IGBT TRENCH FS 650V 8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 133 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A, Supplier Device Package: DPAK, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 12ns/86ns, Switching Energy: 40µJ (on), 136µJ (off), Test Condition: 400V, 4A, 47Ohm, 15V, Gate Charge: 15.2 nC, Part Status: Active, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 16 A, Power - Max: 68 W.
Інші пропозиції STGD4M65DF2 за ціною від 29.34 грн до 107.93 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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STGD4M65DF2 | STMicroelectronics |
 Description: IGBT TRENCH FS 650V 8A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 133 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Supplier Device Package: DPAK IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 12ns/86ns Switching Energy: 40µJ (on), 136µJ (off) Test Condition: 400V, 4A, 47Ohm, 15V Gate Charge: 15.2 nC Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 16 A Power - Max: 68 W |
на замовлення 2450 шт: термін постачання 21-31 дні (днів) |
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STGD4M65DF2 | STMicroelectronics |
IGBTs Trench gate field-stop IGBT, M series 650 V, 4 A low loss |
на замовлення 2148 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| STGD4M65DF2 |
|
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 650V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 133 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: DPAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/86ns
Switching Energy: 40µJ (on), 136µJ (off)
Test Condition: 400V, 4A, 47Ohm, 15V
Gate Charge: 15.2 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 16 A
Power - Max: 68 W
Description: IGBT TRENCH FS 650V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 133 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: DPAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/86ns
Switching Energy: 40µJ (on), 136µJ (off)
Test Condition: 400V, 4A, 47Ohm, 15V
Gate Charge: 15.2 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 16 A
Power - Max: 68 W
на замовлення 2450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 107.93 грн |
| 10+ | 65.82 грн |
| 100+ | 43.76 грн |
| 500+ | 32.19 грн |
| 1000+ | 29.34 грн |
| STGD4M65DF2 |
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Виробник: STMicroelectronics
IGBTs Trench gate field-stop IGBT, M series 650 V, 4 A low loss
IGBTs Trench gate field-stop IGBT, M series 650 V, 4 A low loss
на замовлення 2148 шт:
термін постачання 21-30 дні (днів)