STGD4M65DF2 STMicroelectronics
| Кількість | Ціна |
|---|---|
| 143+ | 90.55 грн |
| 154+ | 84.43 грн |
| 200+ | 71.84 грн |
| 500+ | 51.48 грн |
| 1000+ | 45.12 грн |
| 2500+ | 36.96 грн |
| 5000+ | 34.00 грн |
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Технічний опис STGD4M65DF2 STMicroelectronics
Description: IGBT TRENCH FS 650V 8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 133 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A, Supplier Device Package: DPAK, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 12ns/86ns, Switching Energy: 40µJ (on), 136µJ (off), Test Condition: 400V, 4A, 47Ohm, 15V, Gate Charge: 15.2 nC, Part Status: Active, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 16 A, Power - Max: 68 W.
Інші пропозиції STGD4M65DF2 за ціною від 23.97 грн до 112.51 грн
| Фото | Назва | Виробник | Інформація |
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STGD4M65DF2 | Виробник : STMicroelectronics |
 Description: IGBT TRENCH FS 650V 8A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 133 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Supplier Device Package: DPAK IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 12ns/86ns Switching Energy: 40µJ (on), 136µJ (off) Test Condition: 400V, 4A, 47Ohm, 15V Gate Charge: 15.2 nC Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 16 A Power - Max: 68 W |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
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STGD4M65DF2 | Виробник : STMicroelectronics |
IGBTs Trench gate field-stop IGBT, M series 650 V, 4 A low loss |
на замовлення 2148 шт: термін постачання 21-30 дні (днів) |
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STGD4M65DF2 | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 650V 8A 68W 3-Pin(2+Tab) DPAK T/R |
товару немає в наявності |
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STGD4M65DF2 | Виробник : STMicroelectronics |
Description: IGBT TRENCH FS 650V 8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 133 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Supplier Device Package: DPAK IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 12ns/86ns Switching Energy: 40µJ (on), 136µJ (off) Test Condition: 400V, 4A, 47Ohm, 15V Gate Charge: 15.2 nC Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 16 A Power - Max: 68 W |
товару немає в наявності |
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| STGD4M65DF2 | Виробник : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 4A; 68W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape Gate charge: 15.2nC Collector current: 4A Pulsed collector current: 16A Gate-emitter voltage: ±20V Power dissipation: 68W Collector-emitter voltage: 650V Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |