Технічний опис STGF20M65DF2 STMicroelectronics
Description: IGBT TRENCH FS 650V 40A TO-220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 166 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A, Supplier Device Package: TO-220FP, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 26ns/108ns, Switching Energy: 140µJ (on), 560µJ (off), Test Condition: 400V, 20A, 12Ohm, 15V, Gate Charge: 63 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 32.6 W.
Інші пропозиції STGF20M65DF2 за ціною від 49.09 грн до 168.93 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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STGF20M65DF2 | STMicroelectronics |
 Trans IGBT Chip N-CH 650V 40A 32.6W 3-Pin(3+Tab) TO-220FP Tube |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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STGF20M65DF2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 32.6W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 32.6W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 63nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 337 шт: термін постачання 14-30 дні (днів) |
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STGF20M65DF2 | STMicroelectronics |
Description: IGBT TRENCH FS 650V 40A TO-220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 166 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Supplier Device Package: TO-220FP IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 26ns/108ns Switching Energy: 140µJ (on), 560µJ (off) Test Condition: 400V, 20A, 12Ohm, 15V Gate Charge: 63 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 80 A Power - Max: 32.6 W |
на замовлення 1397 шт: термін постачання 21-31 дні (днів) |
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STGF20M65DF2 | STMicroelectronics |
IGBTs Trench gate field-stop IGBT M series, 650 V 20 A low loss |
на замовлення 478 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| STGF20M65DF2 |
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Виробник: STMicroelectronics
Trans IGBT Chip N-CH 650V 40A 32.6W 3-Pin(3+Tab) TO-220FP Tube
Trans IGBT Chip N-CH 650V 40A 32.6W 3-Pin(3+Tab) TO-220FP Tube
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 63.58 грн |
| STGF20M65DF2 |
|
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 32.6W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 32.6W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 32.6W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 32.6W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 337 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 158.04 грн |
| 4+ | 128.51 грн |
| 10+ | 101.15 грн |
| 50+ | 72.96 грн |
| 100+ | 71.30 грн |
| STGF20M65DF2 |
|
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 650V 40A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 166 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/108ns
Switching Energy: 140µJ (on), 560µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 63 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 32.6 W
Description: IGBT TRENCH FS 650V 40A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 166 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/108ns
Switching Energy: 140µJ (on), 560µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 63 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 32.6 W
на замовлення 1397 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 168.93 грн |
| 50+ | 79.10 грн |
| 100+ | 71.03 грн |
| 500+ | 53.37 грн |
| 1000+ | 49.09 грн |
| STGF20M65DF2 |
|
Виробник: STMicroelectronics
IGBTs Trench gate field-stop IGBT M series, 650 V 20 A low loss
IGBTs Trench gate field-stop IGBT M series, 650 V 20 A low loss
на замовлення 478 шт:
термін постачання 21-30 дні (днів)