STGF4M65DF2 STMicroelectronics
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 650V 8A TO220FP
Power - Max: 23 W
Current - Collector Pulsed (Icm): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Gate Charge: 15.2 nC
Test Condition: 400V, 4A, 47Ohm, 15V
Switching Energy: 40µJ (on), 136µJ (off)
Td (on/off) @ 25°C: 12ns/86ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-220FP
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Reverse Recovery Time (trr): 133 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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Технічний опис STGF4M65DF2 STMicroelectronics
Description: IGBT TRENCH FS 650V 8A TO220FP, Power - Max: 23 W, Current - Collector Pulsed (Icm): 16 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 8 A, Part Status: Active, Gate Charge: 15.2 nC, Test Condition: 400V, 4A, 47Ohm, 15V, Switching Energy: 40µJ (on), 136µJ (off), Td (on/off) @ 25°C: 12ns/86ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-220FP, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A, Reverse Recovery Time (trr): 133 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Інші пропозиції STGF4M65DF2
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
STGF4M65DF2 | STMicroelectronics |
IGBTs Trench gate field-stop IGBT, M series 650 V, 4 A low loss |
на замовлення 2077 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| STGF4M65DF2 |
|
Виробник: STMicroelectronics
IGBTs Trench gate field-stop IGBT, M series 650 V, 4 A low loss
IGBTs Trench gate field-stop IGBT, M series 650 V, 4 A low loss
на замовлення 2077 шт:
термін постачання 21-30 дні (днів)