Технічний опис STGP20H65FB2 STMicroelectronics
Description: IGBT 600V 40A 167W TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A, Supplier Device Package: TO-220, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 16ns/78.8ns, Switching Energy: 265µJ (on), 214µJ (off), Test Condition: 400V, 20A, 10Ohm, 15V, Gate Charge: 56 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 147 W.
Інші пропозиції STGP20H65FB2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| STGP20H65FB2 | Виробник : STMicroelectronics |
 Trans IGBT Chip N-CH 650V 40A 147000mW 3-Pin(3+Tab) TO-220 Tube |
товару немає в наявності |
||
| STGP20H65FB2 | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 650V 40A 147000mW 3-Pin(3+Tab) TO-220 Tube |
товару немає в наявності |
||
| STGP20H65FB2 | Виробник : STMicroelectronics |
STGP20H65FB2 THT IGBT transistors |
товару немає в наявності |
||
| STGP20H65FB2 | Виробник : STMicroelectronics |
Description: IGBT 600V 40A 167W TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 16ns/78.8ns Switching Energy: 265µJ (on), 214µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 56 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 147 W |
товару немає в наявності |
||
| STGP20H65FB2 | Виробник : STMicroelectronics |
IGBT Transistors Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT |
товару немає в наявності |