Технічний опис STGP30H65F STMicroelectronics
Description: IGBT 650V 60A 260W TO-220AB, Power - Max: 260 W, Current - Collector (Ic) (Max): 60 A, Part Status: Obsolete, Gate Charge: 105 nC, Test Condition: 400V, 30A, 10Ohm, 15V, Switching Energy: 350µJ (on), 400µJ (off), Td (on/off) @ 25°C: 50ns/160ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-220, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Current - Collector Pulsed (Icm): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V.
Інші пропозиції STGP30H65F
| Фото | Назва | Виробник | Інформація |
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STGP30H65F | Виробник : STMicroelectronics |
 Description: IGBT 650V 60A 260W TO-220ABPower - Max: 260 W Current - Collector (Ic) (Max): 60 A Part Status: Obsolete Gate Charge: 105 nC Test Condition: 400V, 30A, 10Ohm, 15V Switching Energy: 350µJ (on), 400µJ (off) Td (on/off) @ 25°C: 50ns/160ns IGBT Type: Trench Field Stop Supplier Device Package: TO-220 Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V |
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