STGW100H65FB2-4 STMICROELECTRONICS
Виробник: STMICROELECTRONICS
Description: STMICROELECTRONICS - STGW100H65FB2-4 - IGBT, 145 A, 1.55 V, 441 W, 650 V, TO-247, 4 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.55V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 441W
Bauform - Transistor: TO-247
Dauerkollektorstrom: 145A
Anzahl der Pins: 4Pin(s)
Produktpalette: HB2
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: No
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (25-Jun-2025)
| Кількість | Ціна |
|---|---|
| 2+ | 519.60 грн |
| 5+ | 430.15 грн |
| 10+ | 339.89 грн |
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Технічний опис STGW100H65FB2-4 STMICROELECTRONICS
Description: TRENCH GATE FIELD-STOP, 650 V, 1, Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube, Power - Max: 441 W, Current - Collector Pulsed (Icm): 300 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 145 A, Part Status: Active, Gate Charge: 288 nC, Test Condition: 400V, 100A, 3.3Ohm, 15V, Switching Energy: 1.06mJ (on), 1.14mJ (off), Td (on/off) @ 25°C: 23ns/141ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-247-4, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ).
Інші пропозиції STGW100H65FB2-4 за ціною від 290.64 грн до 631.81 грн
| Фото | Назва | Виробник | Інформація |
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STGW100H65FB2-4 | Виробник : STMicroelectronics |
Description: TRENCH GATE FIELD-STOP, 650 V, 1Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube Power - Max: 441 W Current - Collector Pulsed (Icm): 300 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 145 A Part Status: Active Gate Charge: 288 nC Test Condition: 400V, 100A, 3.3Ohm, 15V Switching Energy: 1.06mJ (on), 1.14mJ (off) Td (on/off) @ 25°C: 23ns/141ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247-4 Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) |
на замовлення 68 шт: термін постачання 21-31 дні (днів) |
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STGW100H65FB2-4 | Виробник : STMicroelectronics |
IGBT Transistors Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT |
на замовлення 45 шт: термін постачання 21-30 дні (днів) |
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| STGW100H65FB2-4 | Виробник : STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 91A; 441W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 91A Power dissipation: 441W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 288nC Kind of package: tube Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |

