STGW10M65DF2 STMicroelectronics
Виробник: STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT M series, 650 V 10 A low loss
на замовлення 1200 шт:
термін постачання 147-156 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 141.4 грн |
| 10+ | 116.41 грн |
| 100+ | 79.91 грн |
| 250+ | 73.92 грн |
| 600+ | 66.59 грн |
| 1200+ | 57.8 грн |
| 3000+ | 54.87 грн |
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Технічний опис STGW10M65DF2 STMicroelectronics
Description: TRENCH GATE FIELD-STOP IGBT M SE, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 96 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 19ns/91ns, Switching Energy: 120µJ (on), 270µJ (off), Test Condition: 400V, 10A, 22Ohm, 15V, Gate Charge: 28 nC, Part Status: Active, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 115 W.
Інші пропозиції STGW10M65DF2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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STGW10M65DF2 | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 650V 20A 115W 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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| STGW10M65DF2 | Виробник : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 10A; 115W; TO247-3 Pulsed collector current: 40A Type of transistor: IGBT Power dissipation: 115W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 28nC Mounting: THT Case: TO247-3 Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 10A кількість в упаковці: 1 шт |
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STGW10M65DF2 | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 650V 20A 115000mW 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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STGW10M65DF2 | Виробник : STMicroelectronics |
Description: TRENCH GATE FIELD-STOP IGBT M SE Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 96 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19ns/91ns Switching Energy: 120µJ (on), 270µJ (off) Test Condition: 400V, 10A, 22Ohm, 15V Gate Charge: 28 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 40 A Power - Max: 115 W |
товар відсутній |
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| STGW10M65DF2 | Виробник : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 10A; 115W; TO247-3 Pulsed collector current: 40A Type of transistor: IGBT Power dissipation: 115W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 28nC Mounting: THT Case: TO247-3 Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 10A |
товар відсутній |