Технічний опис STGW15H120F2 STMicroelectronics
Description: IGBT H-SERIES 1200V 15A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 23ns/111ns, Switching Energy: 380µJ (on), 370µJ (off), Test Condition: 600V, 15A, 10Ohm, 15V, Gate Charge: 67 nC, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 259 W.
Інші пропозиції STGW15H120F2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| STGW15H120F2 | Виробник : STMicroelectronics |
 Trans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin(3+Tab) TO-247 Tube |
товару немає в наявності |
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STGW15H120F2 | Виробник : STMicroelectronics |
Description: IGBT H-SERIES 1200V 15A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 23ns/111ns Switching Energy: 380µJ (on), 370µJ (off) Test Condition: 600V, 15A, 10Ohm, 15V Gate Charge: 67 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 259 W |
товару немає в наявності |
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STGW15H120F2 | Виробник : STMicroelectronics |
IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed |
товару немає в наявності |